MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES

被引:5
|
作者
MIGITAKA, M [1 ]
NAKAMURA, M [1 ]
SAITO, K [1 ]
SEKINE, K [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
关键词
D O I
10.1109/PROC.1972.8925
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1448 / 1449
页数:2
相关论文
共 50 条
  • [31] THE AMMONIA SENSITIVITY OF PT/GAAS SCHOTTKY-BARRIER DIODES
    LECHUGA, LM
    CALLE, A
    GOLMAYO, D
    BRIONES, F
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) : 3348 - 3354
  • [32] ELECTRICAL BEHAVIOR OF SUBMICRON GAAS SCHOTTKY-BARRIER DIODES
    MCCOLL, M
    CHASE, AB
    GARBER, WA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 260 - 261
  • [33] INVESTIGATION OF GAAS SCHOTTKY-BARRIER DIODES IN THE THZ RANGE
    TITZ, RU
    ROSER, HP
    SCHWAAB, GW
    NEILSON, HJ
    WOOD, PA
    CROWE, TW
    PEATMAN, WCB
    PRINCE, J
    DEAVER, BS
    ALIUS, H
    DODEL, G
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1990, 11 (07): : 809 - 820
  • [34] PIEZOELECTRIC PHENOMENA IN IRRADIATED GAAS SCHOTTKY-BARRIER DIODES
    VYATKIN, AP
    MAKSIMOVA, NK
    FILONOV, NG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 352 - 353
  • [35] GAAS PLANAR DOPED BARRIER DIODES FOR MILLIMETER-WAVE DETECTOR APPLICATIONS
    KEARNEY, MJ
    CONDIE, A
    DALE, I
    ELECTRONICS LETTERS, 1991, 27 (09) : 721 - 722
  • [36] SCHOTTKY-BARRIER DIODES
    ADAMS, AR
    JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (10): : 958 - &
  • [37] Detectors with low-barrier Schottky diodes for millimeter-wave imaging array
    Shashkin, V. I.
    Drjagin, Y. A.
    Zakamov, V. R.
    Krivov, S. V.
    Kukin, L. M.
    Murel, A. V.
    Chechenin, Y. I.
    2006 16TH INTERNATIONAL CRIMEAN CONFERENCE MICROWAVE & TELECOMMUNICATION TECHNOLOGY, VOLS 1 AND 2, CONFERENCE PROCEEDINGS, 2006, : 161 - +
  • [38] Millimeter-Wave Schottky Mixer Diodes.
    Haydl, W.
    Wennekers, P.
    Nachrichten Elektronik, 1979, 33 (11): : 357 - 361
  • [39] NOISE IN THE MILLIMETER-BAND SCHOTTKY-BARRIER MIXER DIODES
    KRAVCHUK, SA
    NARITNIK, TN
    POTIENKO, VP
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1989, 32 (10): : 24 - 30
  • [40] CHARACTERISTICS OF MILLIMETER-WAVE SILICON IMPATT DIODES WITH ABRUPT JUNCTIONS
    OHMORI, M
    INO, M
    ELECTRONICS & COMMUNICATIONS IN JAPAN, 1973, 56 (05): : 108 - 114