MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES

被引：5

作者：

MIGITAKA, M ^{[1
]}

NAKAMURA, M ^{[1
]}

SAITO, K ^{[1
]}

SEKINE, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

PROCEEDINGS OF THE IEEE | 1972年 / 60卷 / 11期

关键词：

D O I：

10.1109/PROC.1972.8925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1448 / 1449

页数：2

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