MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES

被引：5

作者：

MIGITAKA, M ^{[1
]}

NAKAMURA, M ^{[1
]}

SAITO, K ^{[1
]}

SEKINE, K ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN

来源：

PROCEEDINGS OF THE IEEE | 1972年 / 60卷 / 11期

关键词：

D O I：

10.1109/PROC.1972.8925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1448 / 1449

页数：2

共 50 条

[1] MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES
NAWATA, K
IKEDA, M
ISHII, Y
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (01) : 128 - 130
[2] COMPUTER STUDY ON GAAS SCHOTTKY-BARRIER IMPATT DIODES
NAKAMURA, M
KODERA, H
MIGITAKA, M
SOLID-STATE ELECTRONICS, 1973, 16 (06) : 663 - 667
[3] GAAS 50 GHZ SCHOTTKY-BARRIER IMPATT DIODES
WATANABE, T
KODERA, H
MIGITAKA, M
ELECTRONICS LETTERS, 1974, 10 (01) : 7 - 8
[4] MILLIMETER-WAVE GAAS READ IMPATT DIODES
ADLERSTEIN, MG
WALLACE, RN
STEELE, SR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (09) : 1151 - 1156
[5] MILLIMETER-WAVE GAAS DISTRIBUTED IMPATT DIODES
BAYRAKTAROGLU, B
SHIH, HD
IEEE ELECTRON DEVICE LETTERS, 1983, 4 (11) : 393 - 395
[6] PLANAR MILLIMETER-WAVE EPITAXIAL SILICON SCHOTTKY-BARRIER CONVERTER DIODES
RUSCH, WVT
BURRUS, CA
SOLID-STATE ELECTRONICS, 1968, 11 (05) : 517 - &
[7] 2-WATT CW GAAS SCHOTTKY-BARRIER IMPATT DIODES
LEE, YS
KIM, CK
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07): : 1153 - &
[8] TEMPERATURE VARIABLE NOISE AND ELECTRICAL CHARACTERISTICS OF AU-GAAS SCHOTTKY-BARRIER MILLIMETER-WAVE MIXER DIODES
ZIRATH, HHG
NILSEN, SM
HJELMGREN, H
RAMBERG, LP
KOLLBERG, EL
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (11) : 1469 - 1475
[9] EFFICIENCIES OF SCHOTTKY-BARRIER GAAS AND BOTH COMPLEMENTARY STRUCTURES OF SI IMPATT DIODES
TANTRAPORN, W
YU, SP
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (05) : 492 - 496
[10] PROPERTIES OF MILLIMETER-WAVE IMPATT DIODES
SEDDIK, MM
HADDAD, GI
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (12) : 809 - 811

← 1 2 3 4 5 →