MILLIMETER-WAVE GAAS SCHOTTKY-BARRIER IMPATT DIODES

被引：5
作者：
MIGITAKA, M [1 ]
NAKAMURA, M [1 ]
SAITO, K [1 ]
SEKINE, K [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO,JAPAN
来源：
PROCEEDINGS OF THE IEEE | 1972年 / 60卷 / 11期
关键词：
D O I：
10.1109/PROC.1972.8925
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1448 / 1449
页数：2
相关论文
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