ANGLE-RESOLVED-PHOTOEMISSION STUDY OF THE ELECTRONIC-STRUCTURE OF GD(0001)

被引：24
|
作者：
VESCOVO, E [1 ]
RADER, O [1 ]
KACHEL, T [1 ]
ALKEMPER, U [1 ]
CARBONE, C [1 ]
机构：
[1] BERLINER ELEKTRONENSPEICHERRING GESELLSCHAFT MBH, W-1000 BERLIN 33, GERMANY
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.47.13899
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electronic structure of thick (> 300 angstrom) single-crystal Gd(0001) layers on W(110) has been studied by angle-resolved-photoelectron spectroscopy. Photoemission spectra measured with photon energies between 30 and 60 eV show intense 4f emission at 8.3-eV binding energy and 5d 6s - derived valence-band states within 4 eV from the Fermi level. No other structure is observed in the 5-11-eV binding-energy region. The valence-band spectra show a surface state at GAMMABAR near the Fermi level and other higher-binding-energy features possibly related to states localized near the surface.
引用
收藏
页码：13899 / 13902
页数：4
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