共 50 条
- [41] INFRA-RED ABSORPTION SPECTRUM OF PHOTOGENERATED FREE CARRIERS IN SILICON ARKIV FOR FYSIK, 1962, 20 (06): : 527 - 538
- [42] ABSORPTION BY FREE CARRIERS IN SILICON IN 40-100MU REGION OPTICS AND SPECTROSCOPY-USSR, 1965, 18 (02): : 174 - &
- [43] ABSORPTION OF INFRARED RADIATION BY ELECTRONS IN P-TYPE SILICON SOVIET PHYSICS-SOLID STATE, 1961, 2 (07): : 1471 - 1475
- [44] INFRARED ABSORPTION OF SILICON OF HIGH RESISTIVITY CONTAINING RADIATION DEFECTS SOVIET PHYSICS-SOLID STATE, 1959, 1 (06): : 894 - 896
- [45] Influence of radiation damage on the absorption of near -infrared light in silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 968 (968):
- [46] CONCERNING THE ABSORPTION OF INFRARED RADIATION IN N-TYPE SILICON SOVIET PHYSICS-SOLID STATE, 1961, 2 (10): : 2354 - 2355
- [48] LO PHONON INSTABILITY IN THE ABSORPTION OF RADIATION BY FREE-CARRIERS IN SEMICONDUCTORS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (02): : K83 - K85
- [50] NONLINEAR ABSORPTION OF ELECTROMAGNETIC-WAVE BY FREE CHARGE-CARRIERS OF SEMICONDUCTORS FIZIKA TVERDOGO TELA, 1974, 16 (11): : 3478 - 3480