EXCITON DYNAMICS IN A GAAS QUANTUM-WELL

被引：54

作者：

ECCLESTON, R

STROBEL, R

RUHLE, WW

KUHL, J

FEUERBACHER, BF

PLOOG, K

机构：

[1] Max-Planck-Institut für Festkörperforschung, 7000 Stuttgart 80

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.44.1395

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-resolved luminescence measurements in a 27-nm GaAs quantum well show that the initial temperature of the photocreated exciton distribution is determined by the excess energy of the excitation photon. Light-hole excitons lying in the band gap transfer to heavy-hole exciton states by density-dependent exciton-exciton scattering. For excitation close to the band edge, excitons cool only via LA-phonon emission. The time-resolved luminescence profile is modeled by evaluating the LA-phonon energy-loss rate.

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页码：1395 / 1398

页数：4

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