STUDIES OF PHOSPHORUS PILE-UP AT THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING

被引：70

作者：

SCHWARZ, SA ^{[1
]}

BARTON, RW ^{[1
]}

HO, CP ^{[1
]}

HELMS, CR ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 05期

关键词：

D O I：

10.1149/1.2127559

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1101 / 1106

页数：6

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