PHOTOEXCITED COHERENT TUNNELING IN A DOUBLE-BARRIER SUPERLATTICE

[1] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[2] MULTIPLE QUANTUM-WELL 10-MU-M GAAS/ALXGA1-XAS INFRARED DETECTOR WITH IMPROVED RESPONSIVITY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1814 - 1816

[3] PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J]. PHYSICAL REVIEW B, 1987, 35 (08): : 4172 - 4175

[4] TUNNELING-ASSISTED IMPACT IONIZATION FOR A SUPERLATTICE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1510 - 1515

[5] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498

[6] LIFETIME OF RESONANT STATE IN A RESONANT TUNNELING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L871 - L873

[7] HEIBLUM M, 1986, HIGH SPEED ELECTRONI

[8] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92

[9] QUANTUM-WELL AVALANCHE MULTIPLICATION INITIATED BY 10 MU-M INTERSUBBAND ABSORPTION AND PHOTOEXCITED TUNNELING [J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 934 - 936

[10] STRONG 8.2 MU-M INFRARED INTERSUBBAND ABSORPTION IN DOPED GAAS/ALAS QUANTUM-WELL WAVE-GUIDES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 273 - 275

[1] RESONANT TUNNELING THROUGH DOUBLE BARRIERS, PERPENDICULAR QUANTUM TRANSPORT PHENOMENA IN SUPERLATTICES, AND THEIR DEVICE APPLICATIONS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1853 - 1869

[2] MULTIPLE QUANTUM-WELL 10-MU-M GAAS/ALXGA1-XAS INFRARED DETECTOR WITH IMPROVED RESPONSIVITY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1814 - 1816

[3] PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J]. PHYSICAL REVIEW B, 1987, 35 (08): : 4172 - 4175

[4] TUNNELING-ASSISTED IMPACT IONIZATION FOR A SUPERLATTICE [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1510 - 1515

[5] NEW TRANSPORT PHENOMENON IN A SEMICONDUCTOR SUPERLATTICE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (08) : 495 - 498

[6] LIFETIME OF RESONANT STATE IN A RESONANT TUNNELING SYSTEM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L871 - L873

[7] HEIBLUM M, 1986, HIGH SPEED ELECTRONI

[8] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92

[9] QUANTUM-WELL AVALANCHE MULTIPLICATION INITIATED BY 10 MU-M INTERSUBBAND ABSORPTION AND PHOTOEXCITED TUNNELING [J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 934 - 936

[10] STRONG 8.2 MU-M INFRARED INTERSUBBAND ABSORPTION IN DOPED GAAS/ALAS QUANTUM-WELL WAVE-GUIDES [J]. APPLIED PHYSICS LETTERS, 1987, 50 (05) : 273 - 275