2-CENTRE ELECTRONIC STATES IN N-TYPE SILICON AND GERMANIUM

被引：2

作者：

MYSZKOWS.A

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(67)90202-8

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：105 / &

共 16 条

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[8] THE THEORY OF IMPURITY CONDUCTION
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[9] APPROXIMATIONS FOR AC IMPURITY HOPPING CONDUCTION
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[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A): : A564 - &
[10] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON
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