POSITRON-ANNIHILATION IN PURE AND DOPED GAAS AT LOW-TEMPERATURE

被引：16
|
作者：
KERR, DP
KUPCA, S
HOGG, BG
机构：
来源：
PHYSICS LETTERS A | 1982年 / 88卷 / 08期
关键词：
D O I：
10.1016/0375-9601(82)90672-7
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：429 / 431
页数：3
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