TEM investigation of point defect interactions in II-VI compounds

Analysis of the decomposition products of 400keV electron beam irradiated undoped, Cu-doped and In-doped CdTe demonstrates how dopant species influence the processes of secondary defect formation. The tendency for initial formation of cadmium oxides suggests preferential anion removal leading to accelerated oxidation. Electron beam irradiation of ZnS acts to remove extrinsic dislocation loops residual from argon ion milling, in advance of void formation. The migration of point defect clusters within electron beam irradiated ZnS and the evolution of electron beam induced damage in the presence of defects and interfaces are described.