TEMPERATURE-DEPENDENCE OF THE STRESS IN PSG-AL-SI STRUCTURES

被引：4

作者：

SUGAKI, S

SHINTANI, A

NAKASHIMA, H

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(81)90437-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：143 / 150

页数：8

共 16 条

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[3] HILLOCK GROWTH ON LEAD FILMS UPON CYCLING TO CRYOGENIC TEMPERATURES
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[4] DETERMINATION OF STRESS IN FILMS ON SINGLE CRYSTALLINE SILICON SUBSTRATES
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[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1965, 36 (01) : 7 - +
[5] KERN W, 1976, RCA REV, V37, P3
[6] REVERSIBLE HILLOCK GROWTH IN THIN FILMS
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WELLS, OC
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (07) : 234 - &
[7] MCSKIMIN JJ, 1951, PHYS REV, V83, P1080
[8] THERMAL CYCLING AND SURFACE RECONSTRUCTION IN ALUMINUM THIN FILMS
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[9] SHINTANI A, 1980, J APPL PHYS, V51, P4179
[10] SILVERMAN S, 1968, J ELECTROCHEM SOC, V115, P674