ELECTRICAL AND OPTICAL-PROPERTIES OF INN-IN2O3 THIN-FILMS

Thin films of the InN and In2O3 mixture system were deposited on alpha-Al2O3 (0001) substrates by reactive evaporation in mixed nitrogen-oxygen RF plasma. Crystal structure and electrical and optical properties of the obtained films were studied on films containing various amounts of nitrogen and oxygen. C-axis oriented InN thin films were obtained at mixing ratio of oxygen under 5%, and (111) oriented In2O3 thin films were obtained at mixing ratio of oxygen above 20%. Carrier densities of the films having InN increased as nitrogen content decreased and oxygen content increased. Resistivities of the prepared InN-In2O3 thin films varied from 10(-4) OMEGA.cm to about 1 OMEGA.cm, and band gap energies of them varied from 1.9 to 3.7 eV.