MODULATION PROPERTIES OF A NEAR TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER

被引：27

作者：

GILLNER, L ^{[1
]}

机构：

[1] ROYAL INST TECHNOL,DEPT MICROWAVE ENGN,S-10044 STOCKHOLM 70,SWEDEN

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1992年 / 139卷 / 05期

关键词：

LASERS; AMPLIFIERS; MODULATION PROPERTIES;

D O I：

10.1049/ip-j.1992.0057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The amplitude and phase or frequency modulation properties for pump current modulation of a near travelling-wave semiconductor laser amplifier are examined. The investigations are performed numerically in the time domain with large-signal analysis and in the frequency domain with small-signal analysis. It is shown that the modulation bandwidth is increased by high pump current or high input power and that the small-signal modulation efficiency is increased by low pump current or low input power. The validity of the simulations is supported by experimental results.

引用

页码：331 / 338

页数：8

共 18 条

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