PHOTOLUMINESCENCE AND CHANNELING STUDY ON ANNEALING BEHAVIOR OF TE ION-IMPLANTED GAAS

被引：0
作者：
LIN, MS [1 ]
TAKAI, M [1 ]
GAMO, K [1 ]
MASUDA, K [1 ]
NAMBA, S [1 ]
机构：
[1] OSAKA UNIV,FAC ENG SCI,DEPT ELECT ENGN,TOYONAKA,OSAKA,JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C111 / C111
页数：1
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