QUANTUM-WELL INTERSUB-BAND ELECTROLUMINESCENT DIODE AT LAMBDA=5-MU-M

被引:17
作者
FAIST, J
CAPASSO, F
SIRTORI, C
SIVCO, DL
HUTCHINSON, AL
CHU, SNG
CHO, AY
机构
[1] AT&T Bell Laboratories
关键词
ELECTROLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; LIGHT-EMITTING DIODES;
D O I
10.1049/el:19931497
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report the first observation of mid-infra-red electroluminescence associated with an intersub-band transition in a unipolar quantum well diode with graded-pp injector. Power levels in the nanowatt range have been measured up to roomtemperature.
引用
收藏
页码:2230 / 2231
页数:2
相关论文
共 4 条
[1]   MEASUREMENT OF THE INTERSUBBAND SCATTERING RATE IN SEMICONDUCTOR QUANTUM-WELLS BY EXCITED-STATE DIFFERENTIAL ABSORPTION-SPECTROSCOPY [J].
FAIST, J ;
CAPASSO, F ;
SIRTORI, C ;
SIVCO, DL ;
HUTCHINSON, AL ;
CHU, SNG ;
CHO, AY .
APPLIED PHYSICS LETTERS, 1993, 63 (10) :1354-1356
[2]  
FAIST J, IN PRESS SOLID STATE
[3]   INTERSUBBAND EMISSION FROM SEMICONDUCTOR SUPERLATTICES EXCITED BY SEQUENTIAL RESONANT TUNNELING [J].
HELM, M ;
ENGLAND, P ;
COLAS, E ;
DEROSA, F ;
ALLEN, SJ .
PHYSICAL REVIEW LETTERS, 1989, 63 (01) :74-77
[4]  
Kazarinov R. F., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P797