UNIAXIAL-STRESS ANALYSIS OF BOUND-EXCITON EXCITED-STATES IN LITHIUM-DOPED SILICON

被引：8

作者：

HENRY, MO

LIGHTOWLERS, EC

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1980年 / 13卷 / 11期

关键词：

D O I：

10.1088/0022-3719/13/11/021

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2215 / 2224

页数：10

共 13 条

[1] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J].

AGGARWAL, RL ;

FISHER, P ;

MOURZINE, V ;

RAMDAS, AK .

PHYSICAL REVIEW, 1965, 138 (3A) :A882-&

[2]

ALKEEV NV, 1973, JETP LETT, V18, P393

[3] ABSORPTION AND LUMINESCENCE TRANSITIONS INVOLVING EXCITED HOLE STATES OF EXCITONS BOUND TO LITHIUM DONORS IN SILICON [J].

HENRY, MO ;

LIGHTOWLERS, EC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (12) :L485-L489

[4] EXCITATION DENSITY DEPENDENCE OF LUMINESCENCE FROM BOUND MULTI-EXCITON COMPLEXES IN PHOSPHORUS DOPED SILICON [J].

HENRY, MO ;

LIGHTOWLERS, EC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (13) :L555-L558

[5]

KAMINSKII AS, 1970, JETP LETT-USSR, V11, P255

[6] SHELL-MODEL OF BOUND MULTIEXCITON COMPLEXES IN SILICON [J].

KIRCZENOW, G .

CANADIAN JOURNAL OF PHYSICS, 1977, 55 (20) :1787-1801

[7] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].

KOSAI, K ;

GERSHENZ.M .

PHYSICAL REVIEW B, 1974, 9 (02) :723-726

[8]

Lyon S. A., 1978, Solid State Communications, V28, P317, DOI 10.1016/0038-1098(78)90432-5

[9] THERMODYNAMIC DETERMINATION OF WORK FUNCTIONS OF BOUND MULTIEXCITON COMPLEXES [J].

LYON, SA ;

SMITH, DL ;

MCGILL, TC .

PHYSICAL REVIEW LETTERS, 1978, 41 (01) :56-60

[10] TEMPERATURE DEPENDENCE OF PAIR BAND LUMINESCENCE IN GAP [J].

MAEDA, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (03) :595-&

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