Formation of silicon nanoclusters in buried ultra-thin oxide layers

被引：1

作者：

Oberemok, O. S. ^{[1
]}

Litovchenko, V. G. ^{[1
]}

Gamov, D. V. ^{[1
]}

Popov, V. G. ^{[1
]}

Melnik, V. P. ^{[1
]}

Gudymenko, O. Yo. ^{[1
]}

Nikirin, V. A. ^{[1
]}

Khatsevich, I. M. ^{[1
]}

机构：

[1] NAS Ukraine, V Lashkaryov Inst Semicond Phys, 41 Prospect Nauky, UA-03028 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2011年 / 14卷 / 03期

关键词：

silicon; nanocluster; buried layer; ion implantation; defects;

D O I：

10.15407/spqeo14.03.269

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The peculiarities of buried layer formation obtained by co-implantation of O-2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2 x 10(16) cm(-2 )and 1.8 x 10(17) cm(-2), respectively. It has been observed that annealing at 1150 degrees C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO2 layer.

引用

页码：269 / 272

页数：4

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