HIGH-QUALITY EPITAXIAL ZNSE AND THE RELATIONSHIP BETWEEN ELECTRON-MOBILITY AND PHOTOLUMINESCENCE CHARACTERISTICS

被引：40

作者：

GIAPIS, KP

LU, DC

JENSEN, KF

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.100967

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：353 / 355

页数：3

相关论文

共 18 条

[1] HIGH ELECTRON MOBILITY IN ZINC SELENIDE THROUGH LOW-TEMPERATURE ANNEALING
AVEN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (03) : 1204 - &
[2] Brooks H., 1955, ADV ELECTRONICS ELEC, P158
[3] EFFECTS OF BEAM PRESSURE RATIOS ON FILM QUALITY IN MBE GROWTH OF ZNSE
CHENG, H
MOHAPATRA, SK
POTTS, JE
SMITH, TL
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 512 - 517
[4] DONOR BOUND-EXCITON EXCITED-STATES IN ZINC SELENIDE
DEAN, PJ
HERBERT, DC
WERKHOVEN, CJ
FITZPATRICK, BJ
BHARGAVA, RN
[J]. PHYSICAL REVIEW B, 1981, 23 (10): : 4888 - 4901
[5] GROWTH OF UNDOPED ZNSE ON (100) GAAS BY MOLECULAR-BEAM EPITAXY - AN INVESTIGATION OF THE EFFECTS OF GROWTH TEMPERATURE AND BEAM PRESSURE RATIO
DEPUYDT, JM
CHENG, H
POTTS, JE
SMITH, TL
MOHAPATRA, SK
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4756 - 4762
[6] ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF ZNSE EPITAXIAL LAYERS GROWN ON GAAS (100) BY ATMOSPHERIC-PRESSURE MOVPE - THE ROLE OF SUBSTRATE-TEMPERATURE
FAN, GH
DAVIES, JI
MAUNG, N
PARROTT, MJ
WILLIAMS, JO
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (04) : 251 - 255
[7] REACTOR PRESSURE-DEPENDENCE OF PROPERTIES OF UNDOPED ZNSE GROWN BY LOW-PRESSURE OMVPE
FUJITA, S
YODO, T
MATSUDA, Y
SASAKI, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) : 169 - 172
[8] LATTICE-MISMATCH EFFECTS ON PROPERTIES IN ZNSE LAYER GROWN ON GAAS SUBSTRATE BY LOW-PRESSURE OMVPE
FUJITA, S
YODO, T
SASAKI, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 27 - 30
[9] A THEORETICAL-ANALYSIS OF ELECTRON-TRANSPORT IN ZNSE
RUDA, HE
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) : 1220 - 1231
[10] ELECTRICAL CHARACTERIZATION OF EPITAXIAL LAYERS
STILLMAN, GE
WOLFE, CM
[J]. THIN SOLID FILMS, 1976, 31 (1-2) : 69 - 88