A NEW MODEL FOR THE CALCULATION OF DISLOCATION FORMATION IN SEMICONDUCTOR MELT GROWTH BY TAKING INTO ACCOUNT THE DYNAMICS OF PLASTIC-DEFORMATION

被引:68
作者
VOLKL, J [1 ]
MULLER, G [1 ]
机构
[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSENSCH,KRISTALLAB,D-8520 ERLANGEN,FED REP GER
关键词
D O I
10.1016/0022-0248(89)90255-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:136 / 145
页数:10
相关论文
共 27 条
[1]  
Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4
[2]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[3]   NUMERICAL TREATMENT OF ORDINARY DIFFERENTIAL EQUATIONS BY EXTRAPOLATION METHODS [J].
BULIRSCH, R ;
STOER, J .
NUMERISCHE MATHEMATIK, 1966, 8 (01) :1-&
[4]  
CARSLAW HS, 1959, CONDUCTION HEAT SOLI
[5]   GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].
DASH, WC .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :459-474
[6]  
DIETER GE, 1976, MECHANICAL METALLURG, P313
[8]   TEMPERATURE-GRADIENTS, DOPANTS, AND DISLOCATION FORMATION DURING LOW-PRESSURE LEC GROWTH OF GAAS [J].
ELLIOT, AG ;
WEI, CL ;
VANDERWATER, DA .
JOURNAL OF CRYSTAL GROWTH, 1987, 85 (1-2) :59-68
[9]  
GERLICH D, 1980, HIGH PRESSURE SCI TE, V1, P506
[10]  
Gragg WB, 1965, SIAM J NUM, V2, P384