CONVERSION ELECTRON MOSSBAUER-SPECTROSCOPY STUDY OF EPITAXIAL BETA-FESI2 GROWN BY MOLECULAR-BEAM EPITAXY

被引：52

作者：

FANCIULLI, M ^{[1
]}

ROSENBLAD, C ^{[1
]}

WEYER, G ^{[1
]}

SVANE, A ^{[1
]}

CHRISTENSEN, NE ^{[1
]}

机构：

[1] ETH ZURICH, SOLID STATE PHYS LAB, CH-8093 ZURICH, SWITZERLAND

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.75.1642

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Epitaxial beta-FeSi2 grown by molecular beam epitaxy on Si(001) has been studied by conversion electron Mossbauer spectroscopy with very good statistical accuracy and high resolution. This allowed investigation of the angular dependence of the line intensities revealing that the interpretation of the spectra in terms of a quadrupole coupling of two lines must be different from the one heretofore accepted. The electric field gradients for the two Fe sites are antiparallel and in the beta-FeSi2(001) direction. The isomer shifts are found in fair agreement with ab initio calculations.

引用

页码：1642 / 1645

页数：4

共 14 条

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