MECHANISM OF PRESSURE-INDUCED SEMICONDUCTOR-METAL TRANSITION IN SMS

被引:26
作者
BATLOGG, B [1 ]
SCHOENES, J [1 ]
WACHTER, P [1 ]
机构
[1] ETH ZURICH,LAB FESTKORPER PHYS,8049 ZURICH,HONGGERBERG,SWITZERLAND
关键词
D O I
10.1016/0375-9601(74)90647-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:13 / 14
页数:2
相关论文
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