EXPERIMENTAL-DETERMINATION OF THE GAAS AND GA1-XALXAS BAND-GAP ENERGY-DEPENDENCE ON TEMPERATURE AND ALUMINUM MOLE FRACTION IN THE DIRECT-BAND-GAP REGION

被引：69

作者：

ELALLALI, M ^{[1
]}

SORENSEN, CB ^{[1
]}

VEJE, E ^{[1
]}

TIDEMANDPETERSSON, P ^{[1
]}

机构：

[1] TFL,TELECOMMUN RES LAB,DK-2970 HORSHOLM,DENMARK

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.48.4398

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The band-gap energy of GaAs and Ga1-xAlxAs has been measured with the use of photoluminescence from 10 to 300 K, and at various values of the aluminum mole fraction x, in the direct band-gap region. The temperature dependence has been fitted with the Varshni relation, and a discussion of this fitting is given. The results for GaAs are discussed in relation to previous experimental and theoretical data and good agreement is found in some, but not all cases. The observed variation of the band-gap energy of Ga1-xAlxAs with x is presented and compared to previous results.

引用

页码：4398 / 4404

页数：7

共 41 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].