GROWTH-KINETICS AND REACTION-MECHANISM OF SILICON CHEMICAL VAPOR-DEPOSITION FROM SILANE

被引：29

作者：

TAO, M ^{[1
]}

机构：

[1] ZHEJIANG UNIV,INST SEMICOND,ZHEJIANG 310027,PEOPLES R CHINA

来源：

THIN SOLID FILMS | 1993年 / 223卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90522-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper the kinetics of silicon chemical vapour deposition from silane are studied. The growth rate of a gas-solid deposition reaction is derived on the basis of collision theory of heterogeneous unimolecular elementary reaction and classical statistical physics. A set of homogeneous and heterogeneous reaction mechanisms is suggested for silane deposition. This model can explain many experimental phenomena including low and atmospheric pressure, hydrogen and inert ambient, amorphous, polycrystalline and single-crystal silane deposition. The limitation of the previous kinetic-models of silicon chemical vapour deposition is also discussed.

引用

页码：201 / 211

页数：11

共 50 条

[41] SURFACE-REACTIONS IN SI CHEMICAL VAPOR-DEPOSITION FROM SILANE [J].

GATES, SM ;

GREENLIEF, CM ;

KULKARNI, SK ;

SAWIN, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :2965-2969

[42] Kinetics and mechanism relevant to TiSiN chemical vapor deposition from TDMAT, silane and ammonia [J].

Norton, ET ;

Amato-Wierda, CC .

SURFACE & COATINGS TECHNOLOGY, 2001, 148 (2-3) :251-255

[43] SILANE PYROLYSIS RATES FOR THE MODELING OF CHEMICAL VAPOR-DEPOSITION [J].

MEYERSON, BS ;

JASINSKI, JM .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :785-787

[44] KINETIC MODELING OF THE CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE FROM SILANE OR DISILANE AND NITROUS-OXIDE [J].

GIUNTA, CJ ;

CHAPPLESOKOL, JD ;

GORDON, RG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (10) :3237-3253

[45] SILICON EPITAXY FROM SILANE BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION AT LOW-TEMPERATURES [J].

AGNELLO, PD ;

SEDGWICK, TO ;

BRETZ, KC ;

KUAN, TS .

APPLIED PHYSICS LETTERS, 1992, 61 (11) :1298-1300

[46] CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON FROM SILANE AT LOW-TEMPERATURES .2. PLASMA ENHANCED DEPOSITION [J].

COMFORT, JH ;

REIF, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (08) :2398-2405

[47] Growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane [J].

Kaneko, T ;

Sone, H ;

Miyakawa, N ;

Naka, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (4A) :2089-2091

[48] Crystal growth in silicon chemical vapor deposition from silane. The role of hydrogen [J].

Univ of Illinois at Urbana-Champaign, Urbana, United States .

J Electrochem Soc, 6 (2221-2225)

[49] SELECTIVE DEPOSITION OF SILICON BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION USING PULSED SILANE FLOW [J].

PARSONS, GN .

APPLIED PHYSICS LETTERS, 1991, 59 (20) :2546-2548

[50] CONTROL OF REACTION-MECHANISM OF PHOTOCHEMICAL VAPOR-DEPOSITION OF ALUMINUM FILM BY TIMING OF SOURCE INTRODUCTION [J].

SAHARA, K ;

OUCHI, H ;

HANABUSA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (07) :1545-1548

← 1 2 3 4 5 →