GROWTH-KINETICS AND REACTION-MECHANISM OF SILICON CHEMICAL VAPOR-DEPOSITION FROM SILANE

被引：29

作者：

TAO, M ^{[1
]}

机构：

[1] ZHEJIANG UNIV,INST SEMICOND,ZHEJIANG 310027,PEOPLES R CHINA

来源：

THIN SOLID FILMS | 1993年 / 223卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90522-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper the kinetics of silicon chemical vapour deposition from silane are studied. The growth rate of a gas-solid deposition reaction is derived on the basis of collision theory of heterogeneous unimolecular elementary reaction and classical statistical physics. A set of homogeneous and heterogeneous reaction mechanisms is suggested for silane deposition. This model can explain many experimental phenomena including low and atmospheric pressure, hydrogen and inert ambient, amorphous, polycrystalline and single-crystal silane deposition. The limitation of the previous kinetic-models of silicon chemical vapour deposition is also discussed.

引用

页码：201 / 211

页数：11

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