SILICON HOMOEPITAXIAL THIN-FILMS VIA SILANE PYROLYSIS - HEED AND AUGER-ELECTRON SPECTROSCOPY STUDY

被引：80

|

作者：

HENDERSON, RC

HELM, RF

机构：

来源：

SURFACE SCIENCE | 1972年 / 30卷 / 02期

关键词：

D O I：

10.1016/0039-6028(72)90005-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：310 / +

页数：1

相关论文

共 50 条

[1] AUGER-ELECTRON SPECTROSCOPY ON THIN-FILMS
WIEDMANN, P
SEILER, H
MIKROSKOPIE, 1978, 34 (5-6) : 176 - 176
[2] AUGER-ELECTRON SPECTROSCOPY OF LA THIN-FILMS
ADAMCHUK, VK
FEDOROV, AV
SHIKIN, AM
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1991, 55 (12): : 2294 - 2297
[3] SPUTTERED METAL SILICON THIN-FILMS STUDIED BY AUGER-ELECTRON SPECTROSCOPY
PAYLING, R
HARDING, GL
CRAIG, S
APPLIED SURFACE SCIENCE, 1985, 24 (01) : 11 - 17
[4] AUGER-ELECTRON SPECTROSCOPY AND SPUTTER AUGER ANALYSES OF THIN-FILMS OF SICX
MORGEN, P
SEAWARD, KL
BARBEE, TW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2108 - 2115
[5] QUANTITATIVE CORRECTION OF BACKSCATTERING IN AUGER-ELECTRON SPECTROSCOPY OF THIN-FILMS
LEVEQUE, G
BONNET, J
APPLIED SURFACE SCIENCE, 1995, 89 (02) : 211 - 219
[6] ELEMENTAL ANALYSIS OF SURFACES AND THIN-FILMS WITH AUGER-ELECTRON SPECTROSCOPY
MACDONAL.NC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) : C243 - C243
[7] GROWTH MODE DISCRIMINATION OF THIN-FILMS BY AUGER-ELECTRON SPECTROSCOPY
MATSUSHITA, Y
YAGI, K
NARUSAWA, T
HONJO, G
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, : 567 - 570
[8] HIGH-ENERGY ELECTRON-DIFFRACTION AND AUGER-ELECTRON SPECTROSCOPY STUDY OF SILICON EPITAXY BY SILANE PYROLYSIS
HENDERSO.RC
HELM, RF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 164 - &
[9] USE OF AUGER-ELECTRON SPECTROSCOPY TO CHARACTERIZE IMPURITY EFFECTS IN THIN-FILMS
EVANS, CA
BLATTNER, RJ
THIN SOLID FILMS, 1978, 53 (01) : 29 - 30
[10] AUGER-ELECTRON SPECTRA OF MAGNESIUM THIN-FILMS
HALDER, NC
ALONSO, J
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 357 - 357

← 1 2 3 4 5 →