ANISOTROPY OF THE HOT-ELECTRON PROBLEM IN SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES

被引:15
作者
GOLD, L
机构
来源
PHYSICAL REVIEW | 1956年 / 104卷 / 06期
关键词
D O I
10.1103/PhysRev.104.1580
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1580 / 1584
页数:5
相关论文
共 9 条
[1]  
DRESSELHAUS, 1955, PHYS REV, V98, P368
[2]   GALVANOMAGNETIC THEORY FOR ELECTRONS IN GERMANIUM AND SILICON - MAGNETORESISTANCE IN THE HIGH-FIELD SATURATION LIMIT [J].
GOLD, L ;
ROTH, LM .
PHYSICAL REVIEW, 1956, 103 (01) :61-66
[3]  
HAM FS, 1955, PHYS REV A, V100, P1656
[4]   ATTEMPT TO DETECT HIGH MOBILITY HOLES IN GERMANIUM USING THE DRIFT MOBILITY TECHNIQUE [J].
HARRICK, NJ .
PHYSICAL REVIEW, 1955, 98 (04) :1131-1133
[5]   INVESTIGATION OF HOLE INJECTION IN TRANSISTOR ACTION [J].
HAYNES, JR ;
SHOCKLEY, W .
PHYSICAL REVIEW, 1949, 75 (04) :691-691
[6]   SIMULTANEOUS TRANSPORT OF HEAVY AND LIGHT HOLES IN SEMICONDUCTORS WITH A DEGENERATE VALENCE BAND [J].
RITTNER, ES .
PHYSICAL REVIEW, 1956, 101 (04) :1291-1294
[7]  
SCLAR, 1953, PHYS REV, V92, pA858
[8]   HOT ELECTRON PROBLEM IN SEMICONDUCTORS WITH SPHEROIDAL ENERGY SURFACES [J].
SHIBUYA, M .
PHYSICAL REVIEW, 1955, 99 (04) :1189-1191
[9]   HOT ELECTRONS IN GERMANIUM AND OHMS LAW [J].
SHOCKLEY, W .
BELL SYSTEM TECHNICAL JOURNAL, 1951, 30 (04) :990-1034