ELLIPSOMETRY OF ANODIC OXIDE FILMS ON GAAS

被引：38

作者：

DELLOCA, CJ

YAN, G

YOUNG, L

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 01期

关键词：

D O I：

10.1149/1.2407959

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：89 / &

共 9 条

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[2] ELLIPSOMETRY OF NON-UNIFORM ANODIC OXIDE FILMS [J].

DELLOCA, CJ ;

YOUNG, L .

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[3]

DELLOCA CJ, 1969, THESIS U BRITISH COL

[4]

DURHAM EW, 1966, Patent No. 1041314

[5] THERMAL OXIDATION OF GALLIUM ARSENIDE [J].

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[6] AN AMORPHOUS MODIFICATION OF GALLIUM-ARSENIC (V) OXIDE [J].

REVESZ, AG ;

ZAININGER, KH .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1963, 46 (12) :606-606

[7] OXIDE FILMS GROWN ON GAAS IN AN OXYGEN PLASMA [J].

WEINREICH, OA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2924-+

[8]

YOUNG L, 1966, J ELECTROCHEM SOC, V113, P278

[9] ELLIPSOMETRIC INVESTIGATIONS OF OXIDE FILMS ON GAAS [J].

ZAININGER, KH ;

REVESZ, AG .

JOURNAL DE PHYSIQUE, 1964, 25 (1-2) :208-211

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