LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD

被引：0

作者：

MALLARD, RE ^{[1
]}

WILSHAW, PR ^{[1
]}

MASON, NJ ^{[1
]}

WALKER, PJ ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] UNIV OXFORD, CLARENDON LAB, OXFORD, ENGLAND

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 100期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on a detailed study of the microstructure of GaSb layers grown on GaAs by MOCVD, using electron microscopy. HREM reveals that commensurate breakdown of GaSb growth occurs via the introduction of interfacial misfit dislocation within "island" domains when the layer exceeds 10 angstrom in nominal thickness. The dislocations are observed to be almost exclusively of the extended Lomer type. It is proposed that the observed extended nature and partial separation of the dislocations can be understood in relation to the nucleation and glide processes by which they are generated, and are related to the thickness of the commensurate epitaxial layer at the onset of relaxation. The implications of island growth concurrent with lattice relaxation for the growth of threading dislocation-free epilayers is discussed.

引用

页码：331 / 336

页数：6

共 12 条

[1] ATOMISTIC MONTE-CARLO CALCULATION OF CRITICAL LAYER THICKNESS FOR COHERENTLY STRAINED SILICON-LIKE STRUCTURES [J].