DISLOCATION INTERACTIONS IN STRAINED-LAYER STRUCTURES GROWN ON GAAS AND SI SUBSTRATES

被引：14

作者：

HAMAGUCHI, N ^{[1
]}

HUMPHREYS, TP ^{[1
]}

MOORE, DJ ^{[1
]}

PARKER, CA ^{[1
]}

BEDAIR, SM ^{[1
]}

TARN, JCL ^{[1
]}

JIANG, BL ^{[1
]}

ELMASRY, N ^{[1
]}

RADZIMSKI, ZJ ^{[1
]}

ROZGONYI, GA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90566-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：449 / 458

页数：10

共 25 条

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