MBE GROWTH OF INGAAS-INGAALAS HETEROSTRUCTURES FOR APPLICATIONS TO HIGH-SPEED DEVICES

被引：26
作者：
HIYAMIZU, S
FUJII, T
MUTO, S
INATA, T
NAKATA, Y
SUGIYAMA, Y
SASA, S
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(87)90416-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：349 / 358
页数：10
相关论文
共 52 条
[1]   AIAS/N-GAAS SUPERLATTICE AND ITS APPLICATION TO HIGH-QUALITY TWO-DIMENSIONAL ELECTRON-GAS SYSTEMS [J].
BABA, T ;
MIZUTANI, T ;
OGAWA, M .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :526-532
[2]   SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J].
BANDY, S ;
NISHIMOTO, C ;
HYDER, S ;
HOOPER, C .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :817-819
[3]   DOUBLE HETEROSTRUCTURE GA0.47IN0.53AS MESFETS WITH SUB-MICRON GATES [J].
BARNARD, J ;
OHNO, H ;
WOOD, CEC ;
EASTMAN, LF .
ELECTRON DEVICE LETTERS, 1980, 1 (09) :174-176
[4]   PREPARATION AND PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN (AL0.5GA0.5)0.48IN0.52AS [J].
BARNARD, JA ;
WOOD, CEC ;
EASTMAN, LF .
ELECTRON DEVICE LETTERS, 1982, 3 (10) :318-319
[5]   ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703
[6]  
CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[7]   MEASUREMENT OF THE GAMMA-L SEPARATION IN GA-0.47IN-0.53 AS BY ULTRAVIOLET PHOTOEMISSION [J].
CHENG, KY ;
CHO, AY ;
CHRISTMAN, SB ;
PEARSALL, TP ;
ROWE, JE .
APPLIED PHYSICS LETTERS, 1982, 40 (05) :423-425
[8]   MBE GROWTH OF INGAALAS LATTICE-MATCHED TO INP BY PULSED MOLECULAR-BEAM METHOD [J].
FUJII, T ;
NAKATA, Y ;
SUGIYAMA, Y ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (03) :L254-L256
[9]   HEAVILY SI-DOPED INGAAS LATTICE-MATCHED TO INP GROWN BY MBE [J].
FUJII, T ;
INATA, T ;
ISHII, K ;
HIYAMIZU, S .
ELECTRONICS LETTERS, 1986, 22 (04) :191-192
[10]   INGAALAS/INGAAS AND INALAS/INGAALAS QUANTUM-WELL STRUCTURES GROWN BY MBE USING PULSED MOLECULAR-BEAM METHOD [J].
FUJII, T ;
NAKATA, Y ;
MUTO, S ;
HIYAMIZU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L598-L600
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