THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS

[1] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247

[2] A RADIATION-HARD SILICON GATE BULK CMOS CELL FAMILY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1712 - 1715

[3] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[4] THE EFFECT OF GATE OXIDE THICKNESS ON THE RADIATION HARDNESS OF SILICON-GATE CMOS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4349 - 4353

[5] 2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3492 - 3494

[6] ZAININGER KH, 1967, RCA REV, V28, P208

[1] CMOS HARDNESS PREDICTION FOR LOW-DOSE-RATE ENVIRONMENTS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2244 - 2247

[2] A RADIATION-HARD SILICON GATE BULK CMOS CELL FAMILY [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1712 - 1715

[3] A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) : 1651 - 1657

[4] THE EFFECT OF GATE OXIDE THICKNESS ON THE RADIATION HARDNESS OF SILICON-GATE CMOS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) : 4349 - 4353

[5] 2-STAGE PROCESS FOR BUILDUP OF RADIATION-INDUCED INTERFACE STATES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3492 - 3494

[6] ZAININGER KH, 1967, RCA REV, V28, P208