THE EFFECTS OF TEST CONDITIONS ON MOS RADIATION-HARDNESS RESULTS

被引:58
作者
DRESSENDORFER, PV
SODEN, JM
HARRINGTON, JJ
NORDSTROM, TV
机构
关键词
D O I
10.1109/TNS.1981.4335713
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:4281 / 4287
页数:7
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