DEFORMATION OF SI(100) WAFERS DURING RAPID THERMAL ANNEALING

被引：3
|
作者：
JONGSTE, JF
OOSTERLAKEN, TGM
BART, GCJ
JANSSEN, GCAM
RADELAAR, S
机构：
[1] Delft Institute for Microelectronics and Submicron Technology, Submicron Technology Section, (DIMES/S), Delft University of Technology, 2600 GA Delft
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 06期
关键词：
D O I：
10.1063/1.356175
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper in situ wafer curvature measurements are presented that were performed during rapid thermal annealing of silicon wafers. The wafer curvature due to thermal stress originating from a nonuniform temperature distribution was measured as a function of time for a fixed setting of the illumination source power. The presence of thermal stress was clearly demonstrated. It was found that wafers deform during the complete annealing cycle and moreover that, the deformation is largest during the heating and cooling transients. The influence of various wafer supports on the deformation was investigated. The use of a susceptor and a guard ring reduce the wafer deformation compared to a free-standing wafer by a factor of 6 and 10, respectively.
引用
收藏
页码：2830 / 2836
页数：7
相关论文
共 50 条
  • [41] Redistribution of boron and fluorine atoms in BF2 implanted silicon wafers during rapid thermal annealing
    Yoo, SY
    Fukada, T
    Setokubo, T
    Aizawa, K
    Ohsawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (03): : 1123 - 1128
  • [42] Rapid thermal annealing and oxidation of silicon wafers with back-side films
    Fiory, AT
    RAPID THERMAL AND INTEGRATED PROCESSING VI, 1997, 470 : 49 - 56
  • [43] Thermal behaviour of Co/Si/W/Si multilayers under rapid thermal annealing
    Luby, S.
    Jergel, M.
    Anopchenko, A.
    Aschentrup, A.
    Hamelmann, F.
    Majkova, E.
    Kleineberg, U.
    Heinzmann, U.
    Applied Surface Science, 1999, 150 (01): : 178 - 184
  • [44] Thermal behaviour of Co/Si/W/Si multilayers under rapid thermal annealing
    Luby, S
    Jergel, M
    Anopchenko, A
    Aschentrup, A
    Hamelmann, F
    Majkova, E
    Kleineberg, U
    Heinzmann, U
    APPLIED SURFACE SCIENCE, 1999, 150 (1-4) : 178 - 184
  • [45] Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures
    Rudakov V.I.
    Denisenko Y.I.
    Naumov V.V.
    Simakin S.G.
    Russian Microelectronics, 2011, 40 (6) : 389 - 394
  • [46] REDUCTION OF DISLOCATION DENSITY OF MBE-GROWN SI1-XGEX LAYERS ON (100) SI BY RAPID THERMAL ANNEALING
    HOLLANDER, B
    MANTL, S
    JAGER, W
    SCHAFFLER, F
    KASPER, E
    THIN SOLID FILMS, 1989, 183 (1 -2 pt 1) : 157 - 164
  • [47] Thermal nitridation kinetics of silicon wafers in nitrogen atmosphere during annealing
    Zhu, HL
    Yang, DR
    Wang, L
    Due, DL
    THIN SOLID FILMS, 2005, 474 (1-2) : 326 - 329
  • [48] THERMODYNAMIC MODEL PREDICTION OF METAL REMOVAL DURING HYDROGEN ANNEALING OF SI WAFERS
    HELMS, CR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (08) : L125 - L128
  • [49] Influence of Rapid Thermal Annealing on the Specific Features of Defect Generation in Silicon Wafers during the Formation of Effective Internal Getters
    Mezhennyi, M. V.
    Milvidskii, M. G.
    Resnick, V. J.
    JOURNAL OF SURFACE INVESTIGATION, 2009, 3 (04): : 612 - 619
  • [50] Influence of rapid thermal annealing on the specific features of defect generation in silicon wafers during the formation of effective internal getters
    M. V. Mezhennyi
    M. G. Milvidskii
    V. J. Resnick
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, 3 : 612 - 619
12345