EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY

被引：52

作者：

CHENG, YC ^{[1
]}

SULLIVAN, EA ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA,ONTARIO,CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.1662957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：187 / 192

页数：6

共 18 条

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[3] ROLE OF SCATTERING BY SURFACE-ROUGHNESS IN SILICON INVERSION LAYERS [J].

CHENG, YC ;

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[4] RELATIVE IMPORTANCE OF PHONON SCATTERING TO CARRIER MOBILITY IN SI SURFACE-LAYER AT ROOM-TEMPERATURE [J].

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[8] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

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[9] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

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[10] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

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