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BIPOLAR-TRANSISTOR BASE BANDGAP GRADING FOR MINIMUM DELAY
被引:13
作者
:
MCGREGOR, JM
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical, Computer Engineering University of Waterloo, Waterloo
MCGREGOR, JM
MANKU, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical, Computer Engineering University of Waterloo, Waterloo
MANKU, T
ROULSTON, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical, Computer Engineering University of Waterloo, Waterloo
ROULSTON, DJ
机构
:
[1]
Department of Electrical, Computer Engineering University of Waterloo, Waterloo
来源
:
SOLID-STATE ELECTRONICS
|
1991年
/ 34卷
/ 04期
关键词
:
D O I
:
10.1016/0038-1101(91)90174-W
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
[No abstract available]
引用
收藏
页码:421 / 422
页数:2
相关论文
共 3 条
[1]
2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
[J].
SOLID-STATE ELECTRONICS,
1985,
28
(11)
: 1101
-
1103
[2]
A NEW EFFECT AT HIGH CURRENTS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS
TIWARI, S
论文数:
0
引用数:
0
h-index:
0
TIWARI, S
[J].
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(03)
: 142
-
144
[3]
WEINSTOCK R, 1952, CALCULUS VARIATIONS
←
1
→
共 3 条
[1]
2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION
KROEMER, H
论文数:
0
引用数:
0
h-index:
0
KROEMER, H
[J].
SOLID-STATE ELECTRONICS,
1985,
28
(11)
: 1101
-
1103
[2]
A NEW EFFECT AT HIGH CURRENTS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS
TIWARI, S
论文数:
0
引用数:
0
h-index:
0
TIWARI, S
[J].
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(03)
: 142
-
144
[3]
WEINSTOCK R, 1952, CALCULUS VARIATIONS
←
1
→