The Effect of The Oxidation on GaAs Semiconductor Surface to the System Characteristics in A Double-Gapped Plasma Cell

被引：3
作者：
Kurt, Hilal Yucel [1 ]
Kalkan, Gulcan [1 ]
Ozer, Metin [1 ]
Tanriverdi, Evrim [1 ]
Yigit, Duygu [1 ]
机构：
[1] Gazi Univ, Fen Fak, Fizik Bolumu, TR-06500 Teknikokullar, Turkey
来源：
JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI | 2014年 / 17卷 / 04期
关键词：
Gas discharge; GaAs; plasma; oxidation; double gap;
D O I：
10.2339/2014.17.4,161-165
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The system characteristic in a double gap gas discharge plasma cell with GaAs cathode has been identified to be unstable due to the oxidation, experimentally. The experimental studies include the system characteristics in a wide range of pressures (p = 28 - 342 Ton), interelectrode distances (d(1) = 50 mu m d(2) = 50 - 320 mu m) and semiconductor cathode diameter D (9 mm). Under the applied voltage U=200-2000, the critical voltage values from the Paschen curves are determined.
引用
收藏
页码：161 / 165
页数：5
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