NEW EVIDENCE FOR A PRESSURE-INDUCED PHASE-TRANSFORMATION DURING THE INDENTATION OF SILICON

被引:197
作者
PHARR, GM [1 ]
OLIVER, WC [1 ]
HARDING, DS [1 ]
机构
[1] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37831
基金
美国能源部;
关键词
D O I
10.1557/JMR.1991.1129
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Scanning electron micrographs of indents in (111) silicon reveal that a thin layer of material immediately adjacent to the indenter is plastically extruded. The fact that the material can be deformed in this way indicates that it has metallic-like mechanical properties. This is presented as new evidence that a pressure-induced phase transformation to the metallic state occurs during the indentation of silicon.
引用
收藏
页码:1129 / 1130
页数:2
相关论文
共 8 条
[1]  
CLARKE DR, 1988, PHYS REV LETT, V21, P2156
[2]   MICROHARDNESS OF CARBON-DOPED (111) P-TYPE CZOCHRALSKI SILICON [J].
DANYLUK, S ;
LIM, DS ;
KALEJS, J .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (09) :1135-1137
[3]   INDENTATION HARDNESS AND SEMICONDUCTOR-METAL TRANSITION OF GERMANIUM AND SILICON [J].
GERK, AP ;
TABOR, D .
NATURE, 1978, 271 (5647) :732-733
[4]   PHASE-TRANSITION IN DIAMOND-STRUCTURE CRYSTALS DURING HARDNESS MEASUREMENTS [J].
GRIDNEVA, IV ;
MILMAN, YV ;
TREFILOV, VI .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (01) :177-182
[5]   STATIC COMPRESSION OF SILICON IN THE [100] AND IN THE [111] DIRECTIONS [J].
GUPTA, MC ;
RUOFF, AL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1072-1075
[6]   CRYSTAL DATA FOR HIGH-PRESSURE PHASES OF SILICON [J].
HU, JZ ;
MERKLE, LD ;
MENONI, CS ;
SPAIN, IL .
PHYSICAL REVIEW B, 1986, 34 (07) :4679-4684
[7]   THE MECHANICAL-BEHAVIOR OF SILICON DURING SMALL-SCALE INDENTATION [J].
PHARR, GM ;
OLIVER, WC ;
CLARKE, DR .
JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (09) :881-887
[8]   HYSTERESIS AND DISCONTINUITY IN THE INDENTATION LOAD-DISPLACEMENT BEHAVIOR OF SILICON [J].
PHARR, GM ;
OLIVER, WC ;
CLARKE, DR .
SCRIPTA METALLURGICA, 1989, 23 (11) :1949-1952