OXYGEN STICKING COEFFICIENTS ON CLEAN (111) SILICON SURFACES

被引:40
作者
CAROSELLA, CA
COMAS, J
机构
[1] Naval Research Laboratory, Washington
关键词
D O I
10.1016/0039-6028(69)90153-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Measurements obtained by activation analysis of the oxygen 18 adsorption on (111) silicon have been used to obtain the kinetic curve for chemisorption from 0.03 to 0.97 monolayers. A graphical differentiation of this kinetic curve gives a plot of the oxygen sticking coefficients versus coverage. Two distinct regions of oxidation at room temperature are observed: an initial rapid growth region below 0.7 monolayers, followed by a much slower adsorption above 0.7 monolayers as normal oxide film formation commences. The results give a value for the maximum sticking coefficient at the extrapolated zero coverage of S = 0.15 and decreases to S = 0.015 at a coverage of 0.7 monolayers. © 1969.
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页码:303 / +
页数:1
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