QUANTUM CONFINEMENT EFFECTS IN ABSORPTION AND EMISSION OF FREESTANDING POROUS SILICON

被引：22

作者：

MAUCKNER, G

REBITZER, W

THONKE, K

SAUER, R

机构：

[1] Abt. Halbleiterphysik, Universität Ulm

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 91卷 / 09期

关键词：

D O I：

10.1016/0038-1098(94)00443-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Free-standing heavily p-doped porous silicon films with varying nanocrystallite sizes are analysed in absorption and photoluminescence experiments. Blueshift of the optical absorption and of the PL-IR and S-band occurs with increasing porosity, i.e. reduced nanoparticle size. Absorption and emission data demonstrate a continuous transition from bulk to quantum confinement-controlled Si bandstructure.

引用

收藏

页码：717 / 720

页数：4

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