LATERAL METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS ON PATTERNED (111)B SUBSTRATES

被引：14
|
作者：
NOMURA, Y [1 ]
MORISHITA, Y [1 ]
GOTO, S [1 ]
KATAYAMA, Y [1 ]
ISU, T [1 ]
机构：
[1] MITSUBISHI ELECTR CO,CENT RES LAB,AMAGASAKI,HYOGO 661,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
METALORGANIC MOLECULAR BEAM EPITAXY; LATERAL EPITAXY; PATTERNED (111)B SUBSTRATES; SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION; FACET;
D O I：
10.1143/JJAP.30.3771
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs layers were grown on patterned (111)BBAR substrates having (122)ABAR sidewalls with various arsenic fluxes at a fixed temperature of 480-degrees-C by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMGa) and metal arsenic. Vertical growth rate on the top and bottom (111)BBAR surfaces decreased rapidly as the arsenic flux was increased. For arsenic fluxes of 2.0 X 10(-3) Pa and more, only lateral epitaxy on the (122)ABAR sidewall was achieved. Real-time scanning microprobe reflection high-energy electron diffraction (mu-RHEED) observations showed that the surface smoothness of the epitaxial layer was maintained throughout the growth time under the optimized condition.
引用
收藏
页码：3771 / 3773
页数：3
相关论文
共 36 条
  • [1] Band gap energy of GaNAs grown on GaAs(001) substrates by metalorganic molecular-beam epitaxy
    Uesugi, K
    Suemune, I
    JOURNAL OF CRYSTAL GROWTH, 1998, 188 (1-4) : 103 - 106
  • [2] Structural properties of CdO layers grown on GaAs (001) substrates by metalorganic molecular beam epitaxy
    Kim, BJ
    Ok, YW
    Seong, TY
    Ashrafi, ABMA
    Kumano, H
    Suemune, I
    JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 219 - 225
  • [3] MECHANISM OF GAAS SELECTIVE GROWTH IN AR+ LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY
    SUGIURA, H
    YAMADA, T
    IGA, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (01): : L1 - L3
  • [4] THE EFFECTS OF LASER IRRADIATION ON INGAAS/GAAS MULTIPLE-QUANTUM WELLS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
    DONG, HK
    HUNG, SCH
    TU, CW
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (04) : 327 - 332
  • [5] Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy
    Suemune, I
    Morooka, N
    Uesugi, K
    Ok, YW
    Seong, TY
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) : 546 - 550
  • [6] Metalorganic molecular beam epitaxy of CuInSe2 on GaAs substrate
    Shirakata, S
    Yudate, S
    Terasako, T
    Isomura, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (9AB): : L1033 - L1035
  • [7] AR ION LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF INGAAS
    IGA, R
    SUGIURA, H
    YAMADA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (1A): : L4 - L6
  • [8] PREPARATION OF CUGASE2 HETEROEPITAXIAL LAYERS BY METALORGANIC MOLECULAR-BEAM EPITAXY
    SHIRAKATA, S
    MORITA, K
    ISOMURA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (5B): : L739 - L742
  • [9] Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy
    Lai, Fang-I
    Kuo, Shou-Yi
    Lin, Woei-Tyng
    Chen, Wei-Chun
    Hsiao, Chien-Nan
    Liu, Yu-Kai
    Shen, Ji-Lin
    JOURNAL OF CRYSTAL GROWTH, 2011, 320 (01) : 32 - 35
  • [10] Molecular beam epitaxy of CuGaSe2 on GaAs substrate using metalorganic copper and gallium precursors
    Shirakata, S
    Tamura, K
    Isomura, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (5A): : L531 - L534
1234