AN ANALYSIS OF CHARGE-TRANSFER RATE CONSTANTS FOR SEMICONDUCTOR LIQUID INTERFACES

被引:168
作者
LEWIS, NS
机构
关键词
PHOTOELECTROCHEMISTRY; SEMICONDUCTOR KINETICS; HETEROGENEOUS ELECTRON TRANSFER;
D O I
10.1146/annurev.physchem.42.1.543
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:543 / 580
页数:38
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共 105 条
  • [11] CAHEN D, 1981, ACS SYM SER, V146, P369, DOI DOI 10.1021/BK-1981-0146.CH024.CH.24
  • [12] INTRAMOLECULAR LONG-DISTANCE ELECTRON-TRANSFER IN ORGANIC-MOLECULES
    CLOSS, GL
    MILLER, JR
    [J]. SCIENCE, 1988, 240 (4851) : 440 - 447
  • [13] HOT CARRIER INJECTION OF PHOTOGENERATED ELECTRONS AT INDIUM-PHOSPHIDE ELECTROLYTE INTERFACES
    COOPER, G
    TURNER, JA
    PARKINSON, BA
    NOZIK, AJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6463 - 6473
  • [14] NON-RADIATIVE EXCITATION DECAY OF CRESYL VIOLET ON TIO2 - VARIATION WITH DYE-SURFACE SEPARATION
    CRACKEL, RL
    STRUVE, WS
    [J]. CHEMICAL PHYSICS LETTERS, 1985, 120 (4-5) : 473 - 476
  • [15] ELECTROCHEMICAL REACTIONS INVOLVING HOLES AT ILLUMINATED TIO2 (RUTILE) SINGLE-CRYSTAL ELECTRODE
    DUTOIT, EC
    CARDON, F
    GOMES, WP
    [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1976, 80 (12): : 1285 - 1288
  • [16] PICOSECOND RELAXATION OF HOT-CARRIER DISTRIBUTIONS IN GAAS/GAASP STRAINED-LAYER SUPERLATTICES
    EDELSTEIN, DC
    TANG, CL
    NOZIK, AJ
    [J]. APPLIED PHYSICS LETTERS, 1987, 51 (01) : 48 - 50
  • [17] VOLTAGE DEPENDENCE OF THE DARK AND PHOTOCURRENTS IN SEMICONDUCTOR-ELECTROLYTE JUNCTIONS
    ELGUIBALY, F
    COLBOW, K
    FUNT, BL
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) : 3480 - 3483
  • [18] TIME-RESOLVED PHOTOLUMINESCENCE IN THE PICOSECOND TIME DOMAIN FROM CDS CRYSTALS IMMERSED IN ELECTROLYTES
    EVENOR, M
    GOTTESFELD, S
    HARZION, Z
    HUPPERT, D
    FELDBERG, SW
    [J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (25) : 6213 - 6218
  • [19] FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, P117
  • [20] LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .1. THE POTENTIAL DISTRIBUTION AT THE SI METHANOL INTERFACE
    FANTINI, MCA
    SHEN, WM
    TOMKIEWICZ, M
    GAMBINO, JP
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4884 - 4890