ULTRAFAST ADIABATIC FOLLOWING IN SEMICONDUCTORS

被引：124
作者：
BINDER, R
KOCH, SW
LINDBERG, M
PEYGHAMBARIAN, N
机构：
[1] UNIV ARIZONA, DEPT PHYS, TUCSON, AZ 85721 USA
[2] FORSCHUNGSZENTRUM JULICH, W-5170 JULICH 1, GERMANY
来源：
PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.65.899
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The full semiconductor Bloch equations are solved to analyze the ultrafast exciton dynamics in semiconductors. Transient adiabatic following is obtained for large detunings and arbitrary intensities, leading to exciton Stark shift, bleaching, and recovery on the time scale of the pump pulse. The many-body Coulomb effects strongly influence the semiconductor response for resonant excitation conditions, almost doubling the effective Rabi frequency of the applied field. © 1990 The American Physical Society.
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页码：899 / 902
页数：4
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