OXIDATION OF SILICON-NITRIDE IN THE TEMPERATURE-RANGE 1150-1450-DEGREES-C

被引：0

作者：

MUKERJI, J

NANDI, AK

机构：

来源：

INDIAN JOURNAL OF TECHNOLOGY | 1978年 / 16卷 / 10期

关键词：

CHEMICAL REACTIONS - Oxidation;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxidation of alpha -silicon nitride in air with a water vapor pressure of 2 multiplied by 10** minus **2 atm in the temperature range 1100-1450 degree C is controlled by the diffusion of oxygen through silica. The oxidation data can be best represented by two sets of curves, one for the temperature range 1144-1230 degree C and the other for 1378-1450 degree C. The activation energy oxidation is 70. 15 kcal/mole.

引用

页码：419 / 421

页数：3

共 9 条

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