LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .4. IMPEDANCE SPECTROSCOPY OF REACTIVE ION-ETCHED SI

被引：7

作者：

FANTINI, MCA ^{[1
]}

SHEN, WM ^{[1
]}

TOMKIEWICZ, M ^{[1
]}

GAMBINO, JP ^{[1
]}

机构：

[1] IBM CORP,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.344310

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2148 / 2155

页数：8

共 36 条

[1] LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .3. MODULATION SPECTROSCOPIES OF REACTIVE ION ETCHING OF SI
SHEN, WM
FANTINI, MCA
POLLAK, FH
TOMKIEWICZ, M
LEARY, HJ
GAMBINO, JP
JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) : 1765 - 1771
[2] PHOTOLUMINESCENT CHARACTERIZATION OF MBE-GROWN REACTIVE ION-ETCHED GAAS
HEATH, LS
SMITH, DD
DUTTA, M
TAYSINGLARA, MA
MONAHAN, TP
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 495 - 497
[3] LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .5. COMPARISON WITH SOLID-STATE DEVICES USED TO CHARACTERIZE REACTIVE ION ETCHING OF SI
FANTINI, MCA
SHEN, WM
TOMKIEWICZ, M
GAMBINO, JP
JOURNAL OF APPLIED PHYSICS, 1989, 66 (10) : 4846 - 4853
[4] LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .2. PHOTOREFLECTANCE AND ELECTROREFLECTANCE OF N-SI
SHEN, WM
FANTINI, MCA
TOMKIEWICZ, M
GAMBINO, JP
JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) : 1759 - 1764
[5] LIQUID JUNCTIONS FOR CHARACTERIZATION OF ELECTRONIC MATERIALS .1. THE POTENTIAL DISTRIBUTION AT THE SI METHANOL INTERFACE
FANTINI, MCA
SHEN, WM
TOMKIEWICZ, M
GAMBINO, JP
JOURNAL OF APPLIED PHYSICS, 1989, 65 (12) : 4884 - 4890
[6] CHARACTERIZATION OF REACTIVE ION ETCHED SILICON SURFACE BY DEEP LEVEL TRANSIENT SPECTROSCOPY
MATSUMOTO, H
SUGANO, T
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2823 - 2828
[7] Impedance spectroscopy of reactive polymers .4. An improved experimental procedure for measurement of effective resistivity
Bellucci, F
Maio, V
Monetta, T
Nicodemo, L
Mijovic, J
JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 1996, 34 (07) : 1277 - 1280
[8] LIQUID AMMONIA SOLUTIONS .4. SPECTRAL CHARACTERIZATION OF AMIDE ION
CUTHRELL, RE
LAGOWSKI, JJ
JOURNAL OF PHYSICAL CHEMISTRY, 1967, 71 (05) : 1298 - &
[9] DEEP LEVEL TRANSIENT SPECTROSCOPY OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS FABRICATED ON CF4 REACTIVE-ION-ETCHED SI
VUILLAUME, D
LAKHDARI, H
GAMBINO, JP
JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) : 230 - 235
[10] Energy dispersive X-ray spectroscopy analysis of Si sidewall surface etched by deep-reactive ion etching
Matsutani, Akihiro
Nishioka, Kunio
Sato, Mina
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)

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