IMPACT IONIZATION IN P-TYPE INDIUM-ANTIMONIDE

被引:0
作者
AVRAMENKO, VA
STRIKHA, MV
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 06期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:705 / 706
页数:2
相关论文
共 50 条
[31]   CHROMIUM IMPURITY IN INDIUM-ANTIMONIDE [J].
POPOV, VV ;
KOSAREV, VV .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :231-236
[32]   EVAPORATION KINETICS OF INDIUM-ANTIMONIDE [J].
TEMIROV, YS ;
AITKHOZHIN, SA ;
LIDER, VV ;
SEMILETOV, SA .
KRISTALLOGRAFIYA, 1977, 22 (01) :207-209
[33]   BEHAVIOR OF TIN IN INDIUM-ANTIMONIDE [J].
IVLEVA, VS ;
KEVORKOV, MN ;
MITROFANOVA, RS ;
POPKOV, AN ;
SELYANINA, VI .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (03) :308-310
[34]   GALVANOMAGNETIC LUMINESCENCE OF INDIUM-ANTIMONIDE [J].
BERDAHL, P ;
SHAFFER, L .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1330-1332
[35]   THALLIUM SOLUBILITY IN INDIUM-ANTIMONIDE [J].
EVGENEV, SB ;
SOROKINA, OV ;
MASHCHENKO, IV .
ZHURNAL NEORGANICHESKOI KHIMII, 1984, 29 (12) :3128-3130
[36]   DRAG EFFECT IN INDIUM-ANTIMONIDE [J].
KOSAREV, VV ;
TAMARIN, PV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02) :172-175
[37]   MAGNETOCAPACITANCE EFFECT IN INDIUM-ANTIMONIDE [J].
DOBROVOL.VN ;
NINIDZE, GK .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (04) :532-533
[38]   RECOMBINATIONAL PROCESSES IN INDIUM-ANTIMONIDE [J].
KOLESNIKOV, AA .
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1972, (11) :92-+
[39]   BEHAVIOR OF SILICON IN INDIUM-ANTIMONIDE [J].
KEVORKOV, MN ;
POPKOV, AN ;
RYTOVA, NS ;
USPENSKII, VS .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12) :1429-1430
[40]   QUANTUM DOTS ON INDIUM-ANTIMONIDE [J].
MERKT, U .
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1990, 30 :77-93