IMPACT IONIZATION IN P-TYPE INDIUM-ANTIMONIDE

被引：0
作者：
AVRAMENKO, VA
STRIKHA, MV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：705 / 706
页数：2
相关论文
共 50 条
  • [21] ELECTROPOLISHING OF INDIUM-ANTIMONIDE
    MATSAS, EP
    CHAIKIN, VI
    MALYUTENKO, VK
    SNITKO, OV
    [J]. SOVIET ELECTROCHEMISTRY, 1975, 11 (12): : 1743 - 1745
  • [22] INFLUENCE OF STATE OF SURFACE ON CURRENT-VOLTAGE CHARACTERISTICS OF THIN SAMPLES OF P-TYPE INDIUM-ANTIMONIDE .1.
    ZUBENKO, IG
    PROVORNOV, YS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05): : 845 - +
  • [23] ELECTRICAL PROPERTIES OF PLASTICALLY DEFORMED P-TYPE INDIUM ANTIMONIDE
    GALAVANO.VV
    ODING, VG
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (08): : 999 - &
  • [24] ELECTRICAL PROPERTIES OF P-TYPE INDIUM ANTIMONIDE AT LOW TEMPERATURES
    FRITZSCHE, H
    LARKHOROVITZ, K
    [J]. PHYSICAL REVIEW, 1955, 99 (02): : 400 - 405
  • [25] PHOTOCONDUCTIVITY IN P-TYPE INDIUM ANTIMONIDE WITH DEEP ACCEPTOR IMPURITIES
    ENGELER, W
    LEVINSTEIN, H
    STANNARD, C
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 249 - 254
  • [26] ETTINGSHAUSEN EFFECT IN INDIUM-ANTIMONIDE
    GADZHIALIEV, MM
    GIRYAEV, MA
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (12): : 127 - 129
  • [27] FEATURES OF INDIUM-ANTIMONIDE FILMS
    KRAVCHENKO, AF
    MOROZOV, BV
    SKOK, EM
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (02): : 755 - 759
  • [28] DISLOCATION VELOCITIES IN INDIUM-ANTIMONIDE
    MIHARA, M
    NINOMIYA, T
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (01): : 43 - 52
  • [29] POLARIZATION OF INDIUM-ANTIMONIDE ELECTRODE
    SALEM, TM
    ISMAIL, AA
    [J]. ACTA CHIMICA ACADEMIAE SCIENTARIUM HUNGARICAE, 1974, 83 (3-4): : 247 - 257
  • [30] CHROMIUM IMPURITY IN INDIUM-ANTIMONIDE
    POPOV, VV
    KOSAREV, VV
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 231 - 236
12345