共 50 条
- [41] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICONSOLID-STATE ELECTRONICS, 1961, 2 (01) : 35 - +SHOCKLEY, W
- [42] Linearization of P-N junctions by the same P-N junctions27TH EUROPEAN MICROWAVE 97, CONFERENCE + EXHIBITION - BRIDGING THE GAP BETWEEN INDUSTRY AND ACADEMIA, VOLS I AND II, 1997, : 243 - 248Bruck, YM
- [43] New experimental methods of detection the paramagnetic recombination centers in silicon P-N junctions and diodesICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1537 - 1541Vlasenko, LSVlasenko, MP
- [44] MECHANISM OF RADIATIVE RECOMBINATION IN SILICON-DOPED GALLIUM ARSENIDE EPITAXIAL P-N STRUCTURESSOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (04): : 471 - &ALFEROV, ZIGARBUZOV, DZMOROZOV, EPTRETYAKO.DN
- [45] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONSSOLID-STATE ELECTRONICS, 1963, 6 (02) : 169 - 181EVANS, DALANDSBERG, PT
- [46] KINETICS OF RECOMBINATION OF EXCESS CARRIERS IN GAAS P-N JUNCTIONSSOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (07): : 1669 - +IMENKOV, ANKOZLOV, MMNASLEDOV, DNTSARENKO.BV
- [47] MECHANISM OF RADIATION RECOMBINATION IN P-N JUNCTIONS IN INDIUM ARSENIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 305 - +ESINA, NPZOTOVA, NVNASLEDOV, DN
- [48] AN APPROXIMATION FOR GENERATION-RECOMBINATION CURRENT IN P-N JUNCTIONSPROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (07): : 743 - &HAUSER, JR
- [49] RADIATIVE RECOMBINATION REGION IN GAAS=SI P-N STRUCTURESSOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (09): : 1075 - 1077ASKAROV, PADMITRIEV, AGTSARENKOV, BV
- [50] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONSJOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110CHYNOWETH, AGPEARSON, GL