HETEROJUNCTION BAND OFFSETS AND THE INTERFACE DIELECTRIC FUNCTION

被引：15

作者：

DURAN, JC

FLORES, F

TEJEDOR, C

MUNOZ, A

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT CONDENSADA,E-28049 MADRID,SPAIN

[2] UNIV LA LAGUNA,DEPT FIS FUNDAMENTAL & EXPTL,E-38204 LA LAGUNA,SPAIN

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.36.5920

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5920 / 5924

页数：5

共 33 条

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[8] EFFECTIVE TWO-DIMENSIONAL HAMILTONIAN AT SURFACES
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[9] SCHOTTKY-BARRIER FORMATION .1. ABRUPT METAL-SEMICONDUCTOR JUNCTIONS
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