CHEMICAL ORDER IN AMORPHOUS-SILICON CARBIDE

被引:260
作者
TERSOFF, J
机构
[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 23期
关键词
D O I
10.1103/PhysRevB.49.16349
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
While ordering in alloy crystals is well understood, short-range ordering in amorphous alloys remains controversial. Here, by studying computer-generated models of amorphous SiC, we show that there are two principal factors controlling the degree of chemical order in amorphous covalent alloys. One, the chemical preference for mixed bonds, is much the same in crystalline and amorphous materials. However, the other factor, the atomic size difference, is far less effective at driving ordering in amorphous material than in the crystal. As a result, the amorphous phase may show either strong ordering (as in GaAs), or weaker ordering (as in SiC), depending upon the relative importance of these two factors.
引用
收藏
页码:16349 / 16352
页数:4
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