ROOM-TEMPERATURE LASER OPERATION OF INXGA1-X AS P-N-JUNCTIONS

被引：17

作者：

NUESE, CJ ^{[1
]}

ENSTROM, RE ^{[1
]}

ETTENBER.M ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 02期

关键词：

D O I：

10.1063/1.1655104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：83 / 85

页数：3

共 11 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].

ABRAHAMS, MS ;

WEISBERG, LR ;

BUIOCCHI, CJ ;

BLANC, J .

JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) :223-&

[2] EFFECT OF TEMPERATURE ON PROPERTIES OF GAAS LASER [J].

BURNS, G ;

DILL, FH ;

NATHAN, MI .

PROCEEDINGS OF THE IEEE, 1963, 51 (06) :947-&

[3] TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT IN GAAS LASERS ( EPITAXIAL HEAVIER DOPED UNITS FOR LOW THRESHOLD )4 TIMES 104 A/CM2 ) AT 300 DEGREES K 4.2 DEGREES TO 300 DEGREES K E/T ) [J].

DOUSMANIS, GC ;

STAEBLER, DL ;

NELSON, H .

APPLIED PHYSICS LETTERS, 1964, 5 (09) :174-&

[4]

ENSTROM RE, 1971, 3 P INT S GALL ARS R, P30

[5]

KRESSEL H, 1971, LASERS

[6] ZN-DIFFUSED LASER JUNCTIONS IN INXGA1-XAS AND INASXP1-X GROWN FROM IN SOLUTION AT CONSTANT TEMPERATURE [J].

MACKSEY, HM ;

ZACK, GW ;

HOLONYAK, N ;

CAMPBELL, JC .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3533-&

[7]

NUESE CJ, 1972, IEEE T ELECTRON DEVI, VED19, P1067

[8]

PANKOVE JI, 1968, IEEE J QUANTUM ELECT, VQE 4, P119

[9] OPTICALLY PUMPED ROOM-TEMPERATURE INXGA1-XAS LASERS [J].

ROSSI, JA ;

CHINN, SR ;

MOORADIAN, A .

APPLIED PHYSICS LETTERS, 1972, 20 (02) :84-+

[10]

TIETJEN JJ, 1967, T METALL SOC AIME, V239, P385

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